Factory Lead Time  

12 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

43A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Turn Off Delay Time  

29 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

5V @ 250μA

Number of Elements  

1

Power Dissipation (Max)  

3.8W Ta 300W Tc

Series  

HEXFET®

Published  

2002

Operating Temperature  

-55°C~175°C TJ

Packaging  

Tape & Reel (TR)

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

Termination  

SMD/SMT

ECCN Code  

EAR99

Resistance  

54mOhm

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Voltage - Rated DC  

200V

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Current Rating  

38A

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

320W

Case Connection  

DRAIN

Turn On Delay Time  

16 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

54m Ω @ 26A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

91nC @ 10V

Rise Time  

95ns

Vgs (Max)  

±20V

Fall Time (Typ)  

47 ns

Continuous Drain Current (ID)  

44A

Threshold Voltage  

5V

Gate to Source Voltage (Vgs)  

30V

Drain to Source Breakdown Voltage  

200V

Dual Supply Voltage  

200V

Avalanche Energy Rating (Eas)  

460 mJ

Recovery Time  

240 ns

Nominal Vgs  

5 V

Height  

4.826mm

Width  

9.65mm

Length  

10.668mm

RoHS Status  

ROHS3 Compliant

REACH SVHC  

No SVHC

Radiation Hardening  

No

Lead Free  

Lead Free